KANASAKI Junichi

写真a

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Title

Professor

Laboratory location

Sugimoto Campus

Mail Address

E-mail address

Degree 【 display / non-display

  • Nagoya University -  Doctor (Science)

Research Areas 【 display / non-display

Condensed matter physics I, Nanostructural physics

Research subject summary 【 display / non-display

  • Development of advanced technologies controlling carrier and atomic dynamics by fully exploiting unique features of electronic excitation effects,

Research Career 【 display / non-display

  • Ultrafast carrier dynamics in photoexcited semiconductors

      Project Year :

    2009
    -
    Today

Committee Memberships 【 display / non-display

  • 2017
     
     

    International Symposium on Surface Science & Nanotechnology  

  • 2015
     
     

    The 9th International Symposium on Ultrsfast SUrface Dynamics (USD9)  

  • 2012
     
     

    International Conference on Electronic Materials 2012 Symposium on Photo-asisted Synthesis and Processing  

  • 2004
     
     

    10th International Workshop on Desorption Induced by Electronic Transitions  

  • 2002
     
     

    Int. Symp. on Manipulation of Atoms and Molecules by Electronic Excitation  

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Current Career 【 display / non-display

  • Osaka City University   Graduate School of Engineering   Mechanical and Physical Engineering Course   Professor  

Graduate School 【 display / non-display

  • 1985.04
    -
    1987.03

    Nagoya University  Graduate School, Division of Engineering 

Graduating School 【 display / non-display

  • 1981.04
    -
    1985.03

    Nagoya University   Faculty of Engineering  

 

Published Papers 【 display / non-display

  • Ultrafast relaxation dynamics of highly excited hot electrons in silicon

    H. Tanimura, J. Kanasaki, K. Tanimura, J. Sjakste, N. Vast

    Physical Review B  100 ( 3 ) 035201-1 - 035201-13 2019.07  [Refereed]

  • Energy relaxation mechanism of hot-electron ensembles in GaAs: Theoretical and experimental study of its temperature dependence

    J. Sjakste, N. Vast, G. Barbarino, M. Calandra, F. Mauri, J. Kanasaki, H. Tanimura, and K. Tanimura

    Physical Review B  97 ( 6 ) 064302-1 - 064302-9 2018.02  [Refereed]

  • Ultrafast dynamics in photoexcited valence-band states of Si studied by time- and angle-resolved photoemission spectroscopy of bulk direct transitions

    J. Kanasaki, H. Tanimura, K. Tanimura, P. Ries, W. Heckel, K. Biedermann, T. Fauster

    Physical Review B  97 ( 3 ) 035201-1 - 035201-6 2018.01  [Refereed]

  • Electronic structure of surface unoccupied band of Ge(001)-c(4x2): Direct imaging of surface electron relaxation pathways

    J. Kanasaki, I. Yamamoto, J. Azuma, and S. Fukatsu

    Physical Review B  96 ( 11 ) 115301-1 - 115301-7 2017.11  [Refereed]

    DOI

  • Momentum Space View of Ultrafast Dynamics of Highly Energetic Electrons in Photo-Excited Germanium

    J. Kanasaki, I. Yamamoto, J. Azuma, S. Fukatsu

    佐賀大学シンクロトロン光応用研究センター2016-2017年度アクティブレポート  2017

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Conference Activities & Talks 【 display / non-display

  • Relevance of hidden Valleys in the Dequenching of Room-temperature-emitting Ge layers

    T. Sakamoto, Y. Ysutake, J. Kanasaki, S. Fukatsu

    American Vacuum Society (AVS) 66th International Symposium & Exhibition  2019.10 

  • Optical Control of Structural Transformation to Form Nano-scaled Order Phases Including sp3-like Interlayer Bonds in Graphite

    E. Inami, K. Nishioka, J. Kanasaki and K. Tanimura

    The 15th International Conference on Laser Ablation  2019.09 

  • Ultrafast Carrier Dynamics in Photo-Excited Optoelectronic Semiconductors

    J. Kanasaki  [Invited]

    The 2017 EMN Meeting on Optoelectronics 2017  2017.04 

  • Momentum Space View of Ultrafast Carrier Dynamics in Photo-Excited Semiconductors

    J. Kanasaki  [Invited]

    The 3rd Annual World Congress of Smart Materials 2017  2017.03 

  • Direct Imaging of Surface Electron Relaxation and Surface Conduction Band Structures of Ge(001) and (111) Surfaces

    J. Kanasaki, I. Yamamoto, J. Azuma, S. Fukatsu

    Symposium on Surface Science & Nanotechnology 2017  2017.01 

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Intellectual Property 【 display / non-display

  • CVD of film without crystal defect involves depositing atoms composing wafer to remove voids, applying laser beam to wafer to remove declination and depositing semiconductor film

    Application Number US082370  Publication number US5367980-A