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Laboratory location

Sugimoto Campus

Mail Address

E-mail address

Degree 【 display / non-display

  • Nagoya University -  Doctor (Science)

Research Areas 【 display / non-display

Condensed matter physics I, Nanostructural physics

Research subject summary 【 display / non-display

  • Development of advanced technologies controlling carrier and atomic dynamics by fully exploiting unique features of electronic excitation effects,

Research Career 【 display / non-display

  • Ultrafast carrier dynamics in photoexcited semiconductors

      Project Year :


Committee Memberships 【 display / non-display

  • 2017

    International Symposium on Surface Science & Nanotechnology  

  • 2015

    The 9th International Symposium on Ultrsfast SUrface Dynamics (USD9)  

  • 2012

    International Conference on Electronic Materials 2012 Symposium on Photo-asisted Synthesis and Processing  

  • 2004

    10th International Workshop on Desorption Induced by Electronic Transitions  

  • 2002

    Int. Symp. on Manipulation of Atoms and Molecules by Electronic Excitation  

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Current Career 【 display / non-display

  • Osaka City University   Graduate School of Engineering   Mechanical and Physical Engineering Course   Professor  

Graduate School 【 display / non-display

  • 1985.04

    Nagoya University  Graduate School, Division of Engineering 

Graduating School 【 display / non-display

  • 1981.04

    Nagoya University   Faculty of Engineering  


Published Papers 【 display / non-display

  • Laser-induced exfoliation of epitaxial graphene layers on SiC(0001): Optical fabrication of monolayer graphene

    Horie Ryosuke, Ishida Kento, Kanasaki Jun'ichi, Kisoda Kenji, Takahashi Kazutoshi

    The Japan Society of Vacuum and Surface Science, Abstract book of Annual Meeting of the Japan Society of Vacuum and Surface Science  2020 ( 0 )  2020  [Refereed]

     View Summary

    <p>Structural instability of graphene films epitaxially-grown on SiC(0001) upon photoexcitation has been studied by Raman scattering spectroscopy. For as-grown graphene films, a broad 2D-peak originated from the double phonon-scattering were observed at 2705cm<sup>-1</sup>, demonstrating several monolayers of graphene layers grown on the substrate. Under excitation with 800nm laser pulses of 100fs, the intensity decreases at higher energy part of the 2D peak, while increases at lower energy part. The photo-induced change indicates strongly that graphene layers are exfoliated selectively from multilayer domains resulting in the expansion of single-layer domains under photoexcitation. Based on the results, we conclude that the efficiency of photo-induced exfoliation of graphene layers depends strongly on the number of layers of graphene films, and that single-layer graphene on SiC is highly resistive against the photoexcitation.</p>

    DOI CiNii

  • Ultrafast relaxation of photoinjected valence holes on silicon surfaces

    Satoh Yusuke, Kanasaki Jun'ichi, Tanimura Katsumi, Yamamoto Isamu, Azuma Junpei

    The Japan Society of Vacuum and Surface Science, Abstract book of Annual Meeting of the Japan Society of Vacuum and Surface Science  2020 ( 0 )  2020  [Refereed]

     View Summary

    <p>Ultrafast relaxation dynamics of photoinjected holes in the valence band of silicon has been studied using time- and angle-resolved two-photon photoelectron differential spectroscopy. We found that the photoexcitation with fs laser pulses causes a transient reduction in intensity of direct bulk transition peak, together with a peak broadening and a low-energy peak shift. The observed peak broadening and energy shift recovered completely in several ps, while the intensity shows a partial recovery in the same time range followed by a slow relaxation lasting a few hundreds of ps. Also. the temporal evolution of the difference photoemission image reveals that the photoinjected holes initially form a non-equilibrated distribution and then establish a quasi-thermalized distribution during the rapid relaxation process. We will discuss the many-body effects in the valence band states in photoexcited silicon, which rule the ultrafast relaxation process.</p>

    DOI CiNii

  • Ultrafast relaxation dynamics of highly excited hot electrons in silicon

    H. Tanimura, J. Kanasaki, K. Tanimura, J. Sjakste, N. Vast

    Physical Review B  100 ( 3 ) 035201-1 - 035201-13 2019.07  [Refereed]

  • Energy relaxation mechanism of hot-electron ensembles in GaAs: Theoretical and experimental study of its temperature dependence

    J. Sjakste, N. Vast, G. Barbarino, M. Calandra, F. Mauri, J. Kanasaki, H. Tanimura, and K. Tanimura

    Physical Review B  97 ( 6 ) 064302-1 - 064302-9 2018.02  [Refereed]

  • Ultrafast dynamics in photoexcited valence-band states of Si studied by time- and angle-resolved photoemission spectroscopy of bulk direct transitions

    J. Kanasaki, H. Tanimura, K. Tanimura, P. Ries, W. Heckel, K. Biedermann, T. Fauster

    Physical Review B  97 ( 3 ) 035201-1 - 035201-6 2018.01  [Refereed]

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Conference Activities & Talks 【 display / non-display

  • Relevance of hidden Valleys in the Dequenching of Room-temperature-emitting Ge layers

    T. Sakamoto, Y. Ysutake, J. Kanasaki, S. Fukatsu

    American Vacuum Society (AVS) 66th International Symposium & Exhibition  2019.10 

  • Optical Control of Structural Transformation to Form Nano-scaled Order Phases Including sp3-like Interlayer Bonds in Graphite

    E. Inami, K. Nishioka, J. Kanasaki and K. Tanimura

    The 15th International Conference on Laser Ablation  2019.09 

  • Ultrafast Carrier Dynamics in Photo-Excited Optoelectronic Semiconductors

    J. Kanasaki  [Invited]

    The 2017 EMN Meeting on Optoelectronics 2017  2017.04 

  • Momentum Space View of Ultrafast Carrier Dynamics in Photo-Excited Semiconductors

    J. Kanasaki  [Invited]

    The 3rd Annual World Congress of Smart Materials 2017  2017.03 

  • Direct Imaging of Surface Electron Relaxation and Surface Conduction Band Structures of Ge(001) and (111) Surfaces

    J. Kanasaki, I. Yamamoto, J. Azuma, S. Fukatsu

    Symposium on Surface Science & Nanotechnology 2017  2017.01 

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Intellectual Property 【 display / non-display

  • CVD of film without crystal defect involves depositing atoms composing wafer to remove voids, applying laser beam to wafer to remove declination and depositing semiconductor film

    Application Number US082370  Publication number US5367980-A