FUKUDA Tsuneo

写真a

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Title

Associate Professor

Laboratory location

Sugimoto Campus

Degree 【 display / non-display

  • The University of Tokyo -  Doctor of Engineering

Research Areas 【 display / non-display

Thin film/Surface and interfacial physical properties

Research Interests 【 display / non-display

Surface Science

Research Career 【 display / non-display

  • Controlling of semiconductor surface

    (Individual)

    Keyword in research subject:  surface, control, device

Association Memberships 【 display / non-display

  • The Japan Society of Applied Physics

  • The Physical Society of Japan

Current Career 【 display / non-display

  • Osaka City University   Graduate School of Engineering   Physical Electronics and Informatics Course   Associate Professor  

Career 【 display / non-display

  • 2001
     
     

    Osaka City University  

  • 1990
    -
    2001

    Nippon Telegraph and Telephone Co.  

Graduate School 【 display / non-display

  •  
    -
    1990

    The University of Tokyo  Graduate School, Division of Engineering 

Graduating School 【 display / non-display

  •  
    -
    1984

    Tokyo University of Science   Faculty of Science  

 

Published Papers 【 display / non-display

  • First-principles Study of Si-embedded Ni(100) Surfaces

    Fukuda Tsuneo, Kishida Ippei

    公益社団法人 日本表面真空学会 E-JOURNAL OF SURFACE SCIENCE AND NANOTECHNOLOGY  19 ( 0 ) 112 - 118 2021.11  [Refereed]

     View Summary

    <p>First-principles total-energy calculations were applied to 0 to 1 ML of silicon-embedded Ni(100) surfaces in the outmost layer within a 2 &times; 4 unit cell. Up to a half monolayer of embedded silicon, the surface energy decreased monotonically with increasing the number of embedded silicon, and the lowest energy structure was a &radic;2 &times; &radic;2-R45&deg; [or c(2 &times; 2)] structure with diagonally aligned embedded silicon of 0.5 ML. Beyond the half monolayer, the surface energy increased with increasing the number of embedded silicon. The energy of the silicon-embedded structure in the outmost layer of the Ni(100) surface was compared with silicon embedded in the second layer and silicon adsorbed on the Ni(100) surface. Both configurations gave higher energies, which shows the robustness of the &radic;2 &times; &radic;2-R45&deg; structure on the Ni(100) surface. The present results are in perfect agreement with our recent report [T. Fukuda <i>et al.</i>, Jpn. J. Appl. Phys. <b>59</b>, 065501 (2020)].</p>

    DOI CiNii

  • after coronaの学術講演会は…

    福田 常男

    公益社団法人 日本表面真空学会 表面と真空  64 ( 8 ) 351 - 351 2021  [Refereed]

    DOI CiNii

  • Formation of two-dimensional silicide on Ni(100) surface

    Fukuda T., Kishida I, Umezawa K.

    JAPANESE JOURNAL OF APPLIED PHYSICS  59 ( 6 )  2020.06  [Refereed]

    DOI

  • 低・中真空領域における排気方程式の検証

    横川 敬一, 瀬戸 泰平, 福田 常男

    公益社団法人 日本表面真空学会 表面と真空  61 ( 5 ) 292 - 295 2018  [Refereed]

     View Summary

    <p>We studied a pumpdown curve in the low and medium vacuum regimes for a conductance-limited pumping. Senda [H. Senda, SEI Technical Review <b>176</b>, 1 (2010).] predicted that the exponential decrease of the chamber pressure, followed by the reciprocal behavior with time near the lower limit of the viscous flow. He proposed a pressure boundary between the exponential decrease and the reciprocal decrease as a "Bifurcation pressure". We experimentally found bifurcation pressures and they quantitatively compered with the theoretical estimation. The result of our experiment agreed fairly well with values that had been obtained by the theoretical calculation.</p>

    DOI CiNii

  • First-Principles Study of Silicon-Embedded Ni(110)

    Fukuda T., Kishida I.

    E-JOURNAL OF SURFACE SCIENCE AND NANOTECHNOLOGY  15   96 - 101 2017.10  [Refereed]

    DOI

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Books etc 【 display / non-display

  • New Practical Vacuum Technology

    (Part: Joint Work )

    2019.02

Review Papers (Misc) 【 display / non-display

  • Low and Medium Vacuum: Fundamentals and Applications

    J. Vac. Soc. Jpn  58 ( 9 ) 325 - 329 2015.09

Conference Activities & Talks 【 display / non-display

  • Silicene formation on the Ag/Ni(111) surface

    T. Fukuda, S. Sakamoto, K. Umezawa

    ECOSS-34  2018.08 

  • Silicene formation on the Ag/Ni(111) surface

    T. Fukuda, S. Sakamoto, K. Umezawa

    ECOSS-34  2018.08 

  • In situ observation of the indium-induced phase transition on the Si(111) surface by high-temperature STM

    T. Fukuda, S. N. Takeda

    ICN+T2018  2018.07 

  • In situ observation of the indium-induced phase transition on the Si(111) surface by high-temperature STM

    T. Fukuda, S. N. Takeda

    ICN+T2018  2018.07 

  • Hydrogen effect of the low-resistive ITO films on plastic substrates

    T. Fukuda, Y. Kamada, T. Maeda, and T. Shingu

    ITFPC2017  2017.10 

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Theme of Possible Research Exchange 【 display / non-display

  • Vacuum technology and semiconductor thin film growth

    Research theme : We can offer vacumm-related technology. Particularly we are interested in semiconductor thin film formation technology and their evaluation.

    Request for collaborative research : The private sector, such as other institutions

    Type of research exchange : Technical consultation, Consignment study, Collaborative research

    Keyword : Scanning Tunneling Microscopy, Ultra High Vacuum

     View Details

    Application fields / methods etc : Surface coating, thin film devices, and active electronic devices utilied with molecular-beam epitaxy technique.

    Core knowledge, technology, information etc : Atomically resolved surface evaluation technology and crystal growth.