FUKUDA Tsuneo

写真a

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Title

Associate Professor

Laboratory location

Sugimoto Campus

Degree 【 display / non-display

  • The University of Tokyo -  Doctor of Engineering

Research Areas 【 display / non-display

Thin film/Surface and interfacial physical properties

Research Interests 【 display / non-display

Surface Science

Research Career 【 display / non-display

  • Controlling of semiconductor surface

    (Individual)

    Keyword in research subject:  surface, control, device

Association Memberships 【 display / non-display

  • The Japan Society of Applied Physics

  • The Physical Society of Japan

Current Career 【 display / non-display

  • Osaka City University   Graduate School of Engineering   Physical Electronics and Informatics Course   Associate Professor  

Career 【 display / non-display

  • 2001
     
     

    Osaka City University  

  • 1990
    -
    2001

    Nippon Telegraph and Telephone Co.  

Graduate School 【 display / non-display

  •  
    -
    1990

    The University of Tokyo  Graduate School, Division of Engineering 

Graduating School 【 display / non-display

  •  
    -
    1984

    Tokyo University of Science   Faculty of Science  

 

Published Papers 【 display / non-display

  • 低・中真空領域における排気方程式の検証

    横川 敬一, 瀬戸 泰平, 福田 常男

    公益社団法人 日本表面真空学会 表面と真空  61 ( 5 ) 292 - 295 2018  [Refereed]

     View Summary

    <p>We studied a pumpdown curve in the low and medium vacuum regimes for a conductance-limited pumping. Senda [H. Senda, SEI Technical Review <b>176</b>, 1 (2010).] predicted that the exponential decrease of the chamber pressure, followed by the reciprocal behavior with time near the lower limit of the viscous flow. He proposed a pressure boundary between the exponential decrease and the reciprocal decrease as a "Bifurcation pressure". We experimentally found bifurcation pressures and they quantitatively compered with the theoretical estimation. The result of our experiment agreed fairly well with values that had been obtained by the theoretical calculation.</p>

    DOI CiNii

  • First-Principles Study of Silicon-Embedded Ni(110)

    Fukuda T., Kishida I.

    E-JOURNAL OF SURFACE SCIENCE AND NANOTECHNOLOGY  15   96 - 101 2017.10  [Refereed]

    DOI

  • Initial surface silicidation on Ni(110)

    Fukuda T., Kishida I., Umezawa K.

    SURFACE SCIENCE  659   1 - 4 2017.05  [Refereed]

    DOI

  • Ni(110)面上のCu-Ni合金の構造相関

    齋藤 猛流, 福田 常男

    公益社団法人 日本表面科学会 表面科学学術講演会要旨集  37 ( 0 )  2017  [Refereed]

     View Summary

    CuとNiはバルクで全率固溶体を作るが、混合エネルギーが正であるため、相分離することが予想されている。<br> 本発表では、Ni(110)表面上にCu-Niの2次元合金を作製し、STMで構造相関を測定したところ、[1 -1 0]方向にのみ正の相関があることを見出し、Ising模型と比較することによって相互作用エネルギーを導出した。

    DOI CiNii

  • 低・中真空領域での排気方程式の検討

    横川 敬一, 瀬戸 康平, 福田 常男

    公益社団法人 日本表面科学会 表面科学学術講演会要旨集  37 ( 0 )  2017  [Refereed]

     View Summary

    通常、排気方程式は一定の実効排気速度を仮定して計算されるが、粘性流領域ではコンダクタンスが配管出入り口の平均圧力に比例するため、真空容器と真空ポンプとの間のコンダクタンスが小さい場合 、容器内の圧力は指数関数的には変化せず、ある圧力から時間の逆数で圧力が低下する領域がある。配管のコンダクタンスの圧力依存性を含んだ排気方程式の解析解と実験で得られた排気曲線を比較した結果、比較的良い一致を示した。

    DOI CiNii

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Books etc 【 display / non-display

  • New Practical Vacuum Technology

    (Part: Joint Work )

    2019.02

Review Papers (Misc) 【 display / non-display

  • Low and Medium Vacuum: Fundamentals and Applications

    J. Vac. Soc. Jpn  58 ( 9 ) 325 - 329 2015.09

Conference Activities & Talks 【 display / non-display

  • Silicene formation on the Ag/Ni(111) surface

    T. Fukuda, S. Sakamoto, K. Umezawa

    ECOSS-34  2018.08 

  • In situ observation of the indium-induced phase transition on the Si(111) surface by high-temperature STM

    T. Fukuda, S. N. Takeda

    ICN+T2018  2018.07 

  • Hydrogen effect of the low-resistive ITO films on plastic substrates

    T. Fukuda, Y. Kamada, T. Maeda, and T. Shingu

    ITFPC2017  2017.10 

  • Site Correlation of Two-dimensional Cu-Ni Alloys on Ni(110)

    T. Fukuda, I. Kishida, and K. Umezawa

    ECOSS-33  2017.08 

 

Theme of Possible Research Exchange 【 display / non-display

  • Vacuum technology and semiconductor thin film growth

    Research theme : We can offer vacumm-related technology. Particularly we are interested in semiconductor thin film formation technology and their evaluation.

    Request for collaborative research : The private sector, such as other institutions

    Type of research exchange : Technical consultation, Consignment study, Collaborative research

    Keyword : Scanning Tunneling Microscopy, Ultra High Vacuum

     View Details

    Application fields / methods etc : Surface coating, thin film devices, and active electronic devices utilied with molecular-beam epitaxy technique.

    Core knowledge, technology, information etc : Atomically resolved surface evaluation technology and crystal growth.