TAKEUCHI Hideo

写真a

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Title

Associate Professor

Laboratory location

Sugimoto Campus

Homepage URL

http://www.ceres.dti.ne.jp/~hideo-t/

Profile

Hideo Takeuchi was born in Shiga, Japan, in 1973. He received the B.S. degree in Engineering from Osaka City University, Osaka, Japan in 1995, and the M.S. degree in Physics from Graduate School of Science, Osaka University in 1997. In 2002, he received the Ph. D. degree in Engineering from Graduate School of Engineering, Osaka City University.
From 1997 to 1999, he was an engineer for Si-based LSI technology with ROHM CO., LTD., Kyoto, Japan. From 2002 to 2008, he was with Mitsubishi Electric Corporation, Hyogo, Japan, where he was engaged in the research and development of high frequency electronic devices, and focused his attention on the characterization and design technology of epitaxial wafers for heterojunction bipolar transistors (HBTs) and AlxGa1-xN/GaN based high-electron-mobility transistors (HEMTs). From 2008 to 2013, he was an Associate Professor with Department of Electronic Systems Engineering, School of Engineering, The University of Shiga Prefecture, Shiga, Japan. Since 2013, he has been an Associate Professor with Depart-ment of Applied Physics, Graduate School of Engineering, Osaka City University. In the academic position of the universities, he has been focusing his attention on optical functions of semiconductors. His research interests include terahertz radia-tion phenomena observed with the use of the time-domain techniques, ultrafast spectroscopy, photoreflectance spectros-copy, inspection technology for compound semiconductor wafers, and excitons in semiconductors.
Dr. Takeuchi is also a member of The Physical Society of Japan, a member of The Japan Society of Applied Physics, a member of The American Physical Society (APS), a member of The Institute of Electrical and Electronics Engineers (IEEE), a member of American Vacuum Society (AVS), and a member of The Optical Society of America (OSA).

Research Areas 【 display / non-display

Terahertz time-domain spectroscopy for clarifying dynamics of coherent phonons-longitudial optical plasmon coupled mode, Ultrafast pump-probe spectroscopy of coherent phonons

Research Career 【 display / non-display

  • Optical functions of semiconductors

    (Individual) Project Year :

    1994.04
    -
    Today

    Keyword in research subject:  Terahertz time-domain spectroscopy, Ultrafast optical spectrosocpy, Modulation spectroscop, Raman scattering spectroscopy, Polariscopic evaluation of residual strains

Association Memberships 【 display / non-display

  • The Physical Society of Japan

  • The Japan Society of Applied Physics

  • American Physical Society

  • The Institute of Electrical and Electronics Engineers

  • American Vacuum Society (AVS)

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Awards & Honors 【 display / non-display

  • Selected for the May 2011 issue of Virtual Journal of Ultrafast Science (Volume 10, Issue 5).

    Emission of the terahertz electromagnetic wave from coherent longitudinal optical phonons in a GaAs buffer layer optically masked by a GaSb top epitaxial layer

    2011.05   American Institute of Physics

    Winner : Hideo Takeuchi, Syuichi Tsuruta, and Masaaki Nakayama

     View Summary

    We demonstrate that, in a GaSb/GaAs epitaxial structure, the coherent longitudinal optical (LO) phonon in the GaAs layer optically masked by the GaSb top layer is observed utilizing terahertz- electromagnetic-wave spectroscopy. It is confirmed from a Raman scattering measurement that only the optical phonon in the GaSb layer is optically observable, where the photon energy of the excitation laser beam was almost the same as that of the femtosecond pulse pump beam for the terahertz wave measurement. In the terahertz wave measurement, the Fourier power spectrum of the terahertz waveform exhibits both the GaAs and the GaSb LO phonons; namely, the coherent LO phonon in the optically masked GaAs buffer layer is observed in the terahertz wave measurement. This fact demonstrates that the instantaneous surface potential modulation originating from the impulsive carrier excitation by the pump pulses reaches the GaAs buffer layer. Consequently, the above-mentioned surface potential modulation generates the coherent GaAs LO phonon.

Current Career 【 display / non-display

  • Osaka City University   Graduate School of Engineering   Physical Electronics and Informatics Course   Associate Professor  

Career 【 display / non-display

  • 2013.04
    -
    Today

    Osaka City University   Associate Professor

  • 2008.04
    -
    2013.03

    The University of Shiga Prefecture   Asscociate Professor

  • 2002.04
    -
    2008.02

    Mitsubishi Electric Corporation  

  • 1999.04
    -
    2002.03

    Osaka Institute of Technology  

  • 1997.04
    -
    1999.03

    ROHM Co. Ltd.,  

Graduate School 【 display / non-display

  •  
    -
    2002

    Osaka City University  Graduate School, Division of Engineering  Applied Physics 

  •  
    -
    1997

    Osaka University  Graduate School, Division of Natural Science  Physics 

Graduating School 【 display / non-display

  •  
    -
    1997

    Osaka City University   Faculty of Engineering   Department of Applied Physics

 

Published Papers 【 display / non-display

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Books etc 【 display / non-display

  • Polariscopy: Its high sensitivity to internal/residual strains of semiconductor single crystal wafers

    Hideo Takeuchi (Part: Single Translation )

    Nova Science Publishers, NY, United States of America  2014

  • Photoreflectance spectroscopy of Franz-Keldysh oscillations from semiconductor heterostructures for electronic and optoelectronic devices and components

    Hideo Takeuchi (Part: Single Translation )

    Nova Science Publishers, NY, United States of America  2014

  • Terahertz Electromagnetic Waves from Semiconductor Epitaxial Layer Structures: Small Energy Phenomena with a Large Amount of Information

    Hideo Takeuchi (Part: Single Work )

    Wave Propagation edited by Andrey Petrin (INTECH, Vienna, March 2011, ISBN: 978-953-307-275-3).  2011.03

Review Papers (Misc) 【 display / non-display

  • Fablica: Explorling Physics of Waves

    Hideo Takeuchi

    Fablica (Central Workshop of Osaka City University)  29   31 - 40 2018.03

Conference Activities & Talks 【 display / non-display

  • Terahertz emission from coherent longitudinal optical (LO) phonons and LO-phonon-plasmon coupled modes in a low-temperature-grown GaAs epitaxial layer

    Hideo Takeuchi, Takuya Nishimura, Masaaki Nakayama, Andra Chen, Richard L. Field, III, and Rachel S. Goldman

    The 21st International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures (EDISON21)  2019.07 

  • Reliability Evaluation of a Passivation Thin Film Deposited on a GaAs Epilayer with Use of Photoreflectance Spectroscopy

    Hideo Takeuchi

    29th International Conference on Defects in Semiconductors (ICDS 2017), July 31 – Aug.4, 2017, Matsue-Kunibiki messe, Matsue, Japan.  2017.08 

  • Screening effects of photogenerated carriers on terahertz radiation from coherent GaAs-like longitudinal optical phonons in (11n)-oriented GaAs/In0.1Al0.9As strained multiple quantum we

    Hideo Takeuchi, Souta Asai, and Masaaki Nakayama.

    The 20th International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures (EDISON20), Hyatt Regency Hotel, Buffalo, NY USA (July 17-21, 2017).  2017.07 

  • Appearance of coherent LO phonons during the decay of LO-phonon‒plasmon coupled mode in an undoped GaAs/n-type GaAs epitaxial structure

    Takahiro Sumioka, Hideo Takeuchi, Masaaki Nakayama.

    The 19th International Conference on Dynamical Processes in Excited States of Solids (DPC' 16), July 17-22, 2016, Chimie ParisTech, Paris, France.  2016 

  • Effects of photogenerated carrier scattering on the decay process of coherent longitudinal optical phonons in an undoped GaAs/n-type GaAs epitaxial structure investigated by terahertz time-domain spectroscopy

    Hideo Takeuchi, Takahiro Sumioka, and Masaaki Nakayama.

    The Pacific Rim Symposium on Surfaces, Coatings and Interfaces (PacSurf 2016), December 11-15, 2016, The Big Island of Hawaii, USA.   2016 

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Intellectual Property 【 display / non-display

Grant-in-Aid for Scientific Research 【 display / non-display

  • Design guideline for frequency tunable terahertz electromagnetic wave emitters on the basis of semiconductor physics

    Grant-in-Aid for Young Scientists(B) Representative

    Project Year :

    2010.04
    -
    2013.03
     

Other external funds procured 【 display / non-display

  • Time Evolution of Terahertz Electromagnetic Waves from Undoped GaAs/n-type GaAs Epitaxial Layer Structures Clarified with Use of a Time-Partitioning Fourier Transform Method

    System name: Dissemination Grant from Nippon Sheet Glass Foundation for Materials Science and Engineering (Research grant)  Representative

    Project Year :

    2011
     
     

  • 15th International Conference on II-VI Compounds

    System name: Dissemination Grant from Nippon Sheet Glass Foundation for Materials Science and Engineering (Subsidy)  Representative

    Project Year :

    2011
     
     

 

Charge of on-campus class subject 【 display / non-display

  • Fundamentals of Quantum Electronics

    (2018) University, Special course

  • Applied Physics & Electrical Engineering Experiments II

    (2018) University, Special course

  • Introduction to Applied Physics and Electronics

    (2018) University, Special course

  • Seminar in Industrial Mathematics III

    (2018) University, Special course

  • Special Exercise(Optical Properties and Functions of Materials II)

    (2018) Graduate school, Special course

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Other educational activity and Special note 【 display / non-display

  • Class teacher

    (2019)

  • Contribution to FD activities

    (2018)

  • Contribution to internationalization

    (2018)

  • Class teacher

    (2018)

  • Contribution to internationalization

    (2018)

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Seeds 【 display / non-display

  • Terahertz time-domain spectroscopy

    Electric & Electronics

  • Photoreflectance evaluation of compound semiconductor epitaxial wafers for electronic and otpical devices

    Electric & Electronics

  • Reliability and/or surface diagnosis testers using photoreflectance spectroscopy

    Electric & Electronics

  • Application of terahertz waves from coherent LO phonons and LO-phonon-plasmon coupled mode to industry fields such as wireless communications (5~10 THz range)

    Electric & Electronics

 

Other international activities 【 display / non-display

  • Period :

    2018.04
    -
    Today

    Contents of activities : Investigateion of ultrafast optical dynamics of Low-temperature-grown GaAs and Bi-contained III-V semiconductors (Collaboration with Rachel Goldman's Lab. at Michigan University)

    United States of America