SHIGEKAWA Naoteru

写真a

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Title

Professor

Laboratory location

Sugimoto Campus

Research Areas 【 display / non-display

Electron device/Electronic equipment

Research subject summary 【 display / non-display

  • Dissimilar materials such as semiconductors, metal, ceramics are directly bonded. Physical properties of bonding interfaces are investigated. Novel functional devices based on such directly-bonding-based junctions are explored.

Research Career 【 display / non-display

  • Heterogeneous-integrated tandem solar cells on Si substrates

    (Collaboration in Japan) Project Year :

    2011.10
    -
    Today

    Keyword in research subject:  green power devices, high efficiency solar cells, power electronics

  • Heterojunction and heterojunction devices fabricated by direct bonding of widegap semiconductors

    (Collaboration in Japan) Project Year :

    2011.10
    -
    Today

    Keyword in research subject:  green power devices, power electronics

  • Low-loss interconnects by direct bonding of thick metal layers

    (Collaboration in Japan) Project Year :

    2011.10
    -
    Today

    Keyword in research subject:  green power devices, power electronics, monolithic integration

Association Memberships 【 display / non-display

  • Institute of Physics

  • IEEE

Committee Memberships 【 display / non-display

  • 2016.07
    -
    Today

    IEE Electronics Letters   Associate Editor

Awards & Honors 【 display / non-display

  • The 2nd Diamond Related Young Researchers Meeting, Presentation Award, Silver

    2021.11.16   New Diamond Forum

    Winner : Yota Uehigashi

Current Career 【 display / non-display

  • Osaka City University   Graduate School of Engineering   Physical Electronics and Informatics Course   Professor  

 

Published Papers 【 display / non-display

  • Fabrication of p(+)-Si/p-diamond heterojunction diodes and effects of thermal annealing on their electrical properties

    Uehigashi Yota, Ohmagari Shinya, Umezawa Hitoshi, Yamada Hideaki, Liang Jianbo, Shigekawa Naoteru

    DIAMOND AND RELATED MATERIALS  120 2021.12  [Refereed]

    DOI

  • Fabrication of GaN/Diamond Heterointerface and Interfacial Chemical Bonding State for Highly Efficient Device Design

    Liang Jianbo, Kobayashi Ayaka, Shimizu Yasuo, Ohno Yutaka, Kim Seong-Woo, Koyama Koji, Kasu Makoto, Nagai Yasuyoshi, Shigekawa Naoteru

    ADVANCED MATERIALS  33 ( 43 )  2021.10  [Refereed]

    DOI

  • Room temperature direct bonding of diamond and InGaP in atmospheric air

    Jianbo Liang, Yuji Nakamura, Yutaka Ohno, Yasuo Shimizu, Yasuyoshi Nagai, Hongxing Wang, Naoteru Shigekawa

    Functional Diamond  1 ( 1 ) 110 - 116 2021.02  [Refereed]

    DOI

  • Water-soluble ZnSe/ZnS:Mn/ZnS quantum dots convert UV to visible light for improved Si solar cell efficiency

    Nishimura Hisaaki, Maekawa Takaya, Enomoto Kazushi, Shigekawa Naoteru, Takagi Tomomi, Sobue Susumu, Kawai Shoichi, Kim DaeGwi

    JOURNAL OF MATERIALS CHEMISTRY C  9 ( 2 ) 693 - 701 2021.01  [Refereed]

    DOI

  • Fabrication of high-quality GaAs/diamond heterointerface for thermal management applications

    Liang Jianbo, Nakamura Yuji, Zhan Tianzhuo, Ohno Yutaka, Shimizu Yasuo, Katayama Kazu, Watanabe Takanobu, Yoshida Hideto, Nagai Yasuyoshi, Wang Hongxing, Kasu Makoto, Shigekawa Naoteru

    DIAMOND AND RELATED MATERIALS  111 2021.01  [Refereed]

    DOI

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Review Papers (Misc) 【 display / non-display

  • Transport Characteristics of Optically-Excited and Electrically-Injected Minority Electrons across p-Si/n-SiC Hetero-Interfaces

    重川 直輝

    2017 5TH INTERNATIONAL WORKSHOP ON LOW TEMPERATURE BONDING FOR 3D INTEGRATION (LTB-3D)    26 2017  [Refereed]  [Invited]

  • Analysis of the influence of interface charges on the electrical characteristics of GaAs/GaN junctions

    重川 直輝

    2017 5TH INTERNATIONAL WORKSHOP ON LOW TEMPERATURE BONDING FOR 3D INTEGRATION (LTB-3D)    77 2017  [Refereed]  [Invited]

  • Electrical conduction of Si/ITO/Si junctions fabricated by surface activated bonding

    重川 直輝

    2017 5TH INTERNATIONAL WORKSHOP ON LOW TEMPERATURE BONDING FOR 3D INTEGRATION (LTB-3D)    51 2017  [Refereed]  [Invited]

  • Electrical Properties of Al-Foil/4H-SiC Schottky Junctions Fabricated by Surface-Activated Bonding

    重川 直輝

    2017 5TH INTERNATIONAL WORKSHOP ON LOW TEMPERATURE BONDING FOR 3D INTEGRATION (LTB-3D)    68 2017  [Refereed]  [Invited]

  • Impacts of bonding-layer resistance of Si bottom cells on interface resistance in InGaP/GaAs/Si hybrid triple-junction cells

    重川 直輝

    2017 5TH INTERNATIONAL WORKSHOP ON LOW TEMPERATURE BONDING FOR 3D INTEGRATION (LTB-3D)    52 2017  [Refereed]  [Invited]

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Conference Activities & Talks 【 display / non-display

  • Direct bonding of diamond for fabricating advanced electron devices

    Naoteru Shigekawa, Jianbo Liang  [Invited]

    第1回ダイヤモンドデバイス国際ワークショップ  2022.02 

  • Research and development of high-thermal-tolerance interfaces fabricated using direct bonding of diamond

    Naoteru Shigekawa  [Invited]

    2022.02 

  • Fabrication and Characterization of GaN/Diamond bonding interface

    A. Kobayashi, Y. Shimizu, Y. Ohno, S. W. Kim, K. Koyama, M. Kasu, Y. Nagai, N. Shigekawa, J. Liang

    2021 7th International Workshop on Low Temperature Bonding for 3D Integration  2021.10 

  • Ga2O3/3C-SiC direct bonding for efficient surface heat dissipation

    H. Nagai, K. Kawamura, Y. Sakaida, H. Uratani, Y. Shimizu, Y. Ohno, Y. Nagai, N. Shigekawa, J. Liang

    2021 7th International Workshop on Low Temperature Bonding for 3D Integration  2021.10 

  • Coplanar waveguides fabricated by directly bonding metal foils to high-resistivity Si substrates

    Kenya Yonekura, Tasuku Kawamoto, Jianbo Liang, Eiji Shikoh, Koichi Maezawa, Naoteru Shigekawa

    2021 7th International Workshop on Low Temperature Bonding for 3D Integration  2021.10 

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Grant-in-Aid for Scientific Research 【 display / non-display

  • Control of nanostructures of directly-bonded Si/diamond interfaces by annealing

    Project/Area Number : 21H01830  Grant-in-Aid for Scientific Research(B) Representative

    Project Year :

    2021.04
    -
    2025.03
     

  • Heterojunction formation of conductive diamond and GaN, Ga2O3 for vertical device applications

    Project/Area Number : 20K04581  Grant-in-Aid for Scientific Research(C) Partaker / Other

    Project Year :

    2020.04
    -
    2023.03
     

  • Formation of directly-bonded interface between gallium oxide and group-IV semiconductor for power device application

    Project/Area Number : 19H02182  Grant-in-Aid for Scientific Research(B) Partaker / Other

    Project Year :

    2019.04
    -
    2022.03
     

  • Direct bonding of widegap semiconductors and diamond for high-efficiency devices and investigation of bonding interface characteristics

    Project/Area Number : 18K19034  Grant-in-Aid for Challenging Research (Exploratory) Representative

    Project Year :

    2018.06
    -
    2020.03
     

     View Summary

    Diamond FETs were successfully fabricated by growing diamond epi layers on single crystal diamonds directly bonded to Si substrates and performing device process, which indicated that the directly-bonded interfaces are equipped with enough thermal tolerance from the practical viewpoint. GaN epi layers were successfully bonded to diamonds. The bonding interfaces revealed a thermal tolerance at 600 degrees Celsius. TEM observation of GaN/diamond junctions revealed that the intermediate layer formed at bonding interfaces got thinned by annealing. Al and Cu were also bonded to diamonds. The bonding interfaces revealed the thermal tolerance up to temperatures close to the metling points of metals.

  • Post-process control of PV characteristics using wavelength conversion properties of semiconductor nano-particles

    Project/Area Number : 17H03538  Grant-in-Aid for Scientific Research(B) Representative

    Project Year :

    2017.04
    -
    2020.03
     

     View Summary

    We deposit Mn-doped Zn-based nanoparticles (NPs) on Si solar cells using the drop casting and layer-by-layer methods and investigate the relationship between their internal quantum efficiency (IQE) in ultraviolet region (wavelength of 350 nm) and optical density. The IQE is enhanced by depositing NPs. The enhancement of IQE is more marked in Si cells coated by shell-doped NPs. The increase of IQE is well explained by using a model based on the luminescence downshifting effects of NPs. measure their current-voltage and spectral response characteristics. These results indicates the possibility of add-on tuning of spectrum of incident solar irradiance and improvement of solar cell characteristics. The usefulness of advanced optical properties of semiconductor NPs is also suggested.

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Other educational activity and Special note 【 display / non-display

  • Contribution to University-wide Cross-training program

    (2021)

  • Contribution to University-wide Cross-training program

    (2020)

  • Contribution to University-wide Cross-training program

    (2019)

  • Contribution to University-wide Cross-training program

    (2018)

  • Contribution to University-wide Cross-training program

    (2017)

 

Foreigner acceptance 【 display / non-display

  • Academic year : 2021

     View Details

    Number of foreigners accepted
    0
    Number of International Students
    1
  • Academic year : 2020

     View Details

    Number of foreigners accepted
    0
    Number of International Students
    1
  • Academic year : 2019

     View Details

    Number of foreigners accepted
    0
    Number of International Students
    1
  • Academic year : 2018

     View Details

    Number of International Students
    1
  • Academic year : 2017

     View Details

    Number of International Students
    1

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Other international activities 【 display / non-display

  • Period :

    2018.01
    -
    Today

    Contents of activities : Joint research agreement with Centre for Device Thermography and Reliability, School of Physics, University of Bristol, UK.

    United Kingdom