SHIGEKAWA Naoteru

写真a

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Title

Professor

Laboratory location

Sugimoto Campus

Research Areas 【 display / non-display

Electron device/Electronic equipment

Research subject summary 【 display / non-display

  • Dissimilar materials such as semiconductors, metal, ceramics are directly bonded. Physical properties of bonding interfaces are investigated. Novel functional devices based on such directly-bonding-based junctions are explored.

Research Career 【 display / non-display

  • Heterogeneous-integrated tandem solar cells on Si substrates

    (Collaboration in Japan) Project Year :

    2011.10
     
     

    Keyword in research subject:  green power devices, high efficiency solar cells, power electronics

Association Memberships 【 display / non-display

  • Institute of Physics

  • IEEE

Committee Memberships 【 display / non-display

  • 2016.07
    -
    Today

    IEE Electronics Letters   Associate Editor

Current Career 【 display / non-display

  • Osaka City University   Graduate School of Engineering   Physical Electronics and Informatics Course   Professor  

  • Osaka City University   The OCU Advanced Research Institute for Natural Science and Technology (OCARINA)  

 

Published Papers 【 display / non-display

  • Effects of post bonding annealing on GaAs//Si bonding interfaces and its application for sacrificial-layer-etching based multijunction solar cells

    Naoteru Shigekawa, Ryo Kozono, Sanji Yoon, Tomoya Hara, Jianbo Liang, Akira Yasui

    Solar Energy Materials and Solar Cells  2020.03  [Refereed]

    DOI

  • Characterization of Nanoscopic Cu/Diamond Interfaces Prepared by Surface-Activated Bonding: Implications for Thermal Management

    Jianbo Liang, Yutaka Ohno, Yuichiro Yamashita, Yasuo Shimizu, Shinji Kanda, Naoto Kamiuchi, Seongwoo Kim, Koyama Koji, Yasuyoshi Nagai, Makoto Kasu, Naoteru Shigekawa

    ACS Applied Nano Materials  2020.02  [Refereed]

    DOI

  • GaAs/Si Double-Junction Cells Fabricated by Sacrificial Layer Etching of Directly-Bonded III-V/Si Junctions

    Ryo Kozono, Sanji Yoon, Jianbo Liang, Naoteru Shigekawa

    Proceedings 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC), Chicago, IL, USA, 2019    1018 - 1020 2020.02  [Refereed]

    DOI

  • Effects of Layered Cadmium-Based Nanoparticles on Si Solar Cells

    Y. Idutsu, S. Tanaka, J.Liang, T.Narazaki, H.Nishimura, D.G.Kim, N.Shigekawa

    Proceedings 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC), Chicago, IL, USA, 2019    1753 - 1755 2020.02  [Refereed]

    DOI

  • Fabrication of diamond/Cu direct bonding for power device applications

    Shinji Kanda, Yasuo Shimizu, Yutaka Ohno, Kenji Shirasaki, Yasuyoshi Nagai, Makoto Kasu, Naoteru Shigekawa, and Jianbo Liang

    Japanese Journal of Applied Physics  2019.10  [Refereed]

    DOI

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Review Papers (Misc) 【 display / non-display

  • Analysis of the influence of interface charges on the electrical characteristics of GaAs/GaN junctions

    重川 直輝

    2017 5TH INTERNATIONAL WORKSHOP ON LOW TEMPERATURE BONDING FOR 3D INTEGRATION (LTB-3D)    77 2017  [Refereed]  [Invited]

  • Electrical conduction of Si/ITO/Si junctions fabricated by surface activated bonding

    重川 直輝

    2017 5TH INTERNATIONAL WORKSHOP ON LOW TEMPERATURE BONDING FOR 3D INTEGRATION (LTB-3D)    51 2017  [Refereed]  [Invited]

  • Electrical Properties of Al-Foil/4H-SiC Schottky Junctions Fabricated by Surface-Activated Bonding

    重川 直輝

    2017 5TH INTERNATIONAL WORKSHOP ON LOW TEMPERATURE BONDING FOR 3D INTEGRATION (LTB-3D)    68 2017  [Refereed]  [Invited]

  • Impacts of bonding-layer resistance of Si bottom cells on interface resistance in InGaP/GaAs/Si hybrid triple-junction cells

    重川 直輝

    2017 5TH INTERNATIONAL WORKSHOP ON LOW TEMPERATURE BONDING FOR 3D INTEGRATION (LTB-3D)    52 2017  [Refereed]  [Invited]

  • Plane-view transmission electron microscopy of Si/GaAs interfaces fabricated by surface-activated bonding at room temperature

    重川 直輝

    2017 5TH INTERNATIONAL WORKSHOP ON LOW TEMPERATURE BONDING FOR 3D INTEGRATION (LTB-3D)    4 2017  [Refereed]  [Invited]

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Conference Activities & Talks 【 display / non-display

  • GaAs//Si Hybrid Double Junction Cells Fabricated by Direct Bonding of Epitaxially Lifted-Off GaAs Subcell Layers on PET Films

    Ryo Kozono, Jianbo Liang, Kentaroh Watanabe, Masakazu Sugiyama, Naoteru Shigekawa

    29th International Photovoltaic Science and Engineering Conference  2019.11 

  • Electrical Properties of GaAs/GaN Junctions by Bonding GaN Layers Grown on Free Standing Substrates

    Shoji Yamajo, Jianbo Liang, Naoteru Shigekawa

    13th International Conference on Nitride Semiconductors 2019  2019.07 

  • Direct Bonding of GaN and Diamond Without an Intermediate Layer at Room Temperature

    Jianbo Liang, Makoto Kasu, Martin Kuball, Naoteru Shigekawa

    13th International Conference on Nitride Semiconductors 2019  2019.07 

  • Effects of Layered Cadmium-Based Nanoparticles on Si Solar Cells

    Y. Idutsu, S. Tanaka, J.Liang, T.Narazaki, H.Nishimura, D.G.Kim, and N.Shigekawa

    46TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE  2019.06 

  • GaAs/Si Double-Junction Cells Fabricated by Sacrificial Layer Etching of Directly-Bonded III-V/Si Junctions

    Ryo Kozono, Sanji Yoon, Jianbo Liang, Naoteru Shigekawa

    46TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE  2019.06 

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Other educational activity and Special note 【 display / non-display

  • Contribution to University-wide Cross-training program

    (2019)

  • Contribution to University-wide Cross-training program

    (2018)

  • Contribution to University-wide Cross-training program

    (2017)

 

Foreigner acceptance 【 display / non-display

  • Academic year : 2019

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    Number of foreigners accepted
    0
    Number of International Students
    1
  • Academic year : 2018

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    Number of International Students
    1
  • Academic year : 2017

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    Number of International Students
    1
  • Academic year : 2015

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    Number of International Students
    1

    China

  • Academic year : 2014

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    Number of International Students
    1

    China

Other international activities 【 display / non-display

  • Period :

    2018.01
    -
    Today

    Contents of activities : Joint research agreement with Centre for Device Thermography and Reliability, School of Physics, University of Bristol, UK.

    United Kingdom