LIANG JIANBO

写真a

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Title

Associate Professor

Laboratory location

Sugimoto Campus

Research Areas 【 display / non-display

Condensed matter physics I

Current Career 【 display / non-display

  • Osaka City University   Graduate School of Engineering   Physical Electronics and Informatics Course   Associate Professor  

Graduate School 【 display / non-display

  • 2009.04
    -
    2012.03

    Nagoya Institute of Technology  Graduate School, Division of Engineering 

  • 2007.04
    -
    2009.03

    Nagoya Institute of Technology  Graduate School, Division of Engineering 

 

Published Papers 【 display / non-display

  • Low-Temperature Direct Bonding Technologies of Semiconductor Substrates

    Naoteru Shigekawa, Jianbo Liang

    The IEICE Transaction on Electronics   J103-C ( 7 ) 341 - 348 2020.07  [Refereed]  [Invited]

  • Chemical bonding at room temperature via surface activation to fabricate low-resistance GaAs/Si heterointerfaces

    Yutaka Ohnoa, Jianbo Liangb, Naoteru Shigekawab, Hideto Yoshidac, Seiji Takedac, Reina Miyagawad, Yasuo Shimizue, Yasuyoshi Nagai

    Applied Surface Science  525   146610 2020.05  [Refereed]

  • Effects of post bonding annealing on GaAs//Si bonding interfaces and its application for sacrificial-layer-etching based multijunction solar cells

    Naoteru Shigekawa, Ryo Kozono, Sanji Yoon, Tomoya Hara, Jianbo Liang, and Akira Yasui

    Solar Energy Materials and Solar Cells  210   110501 2020.03  [Refereed]

  • Characterization of Nanoscopic Cu/Diamond Interfaces Prepared by Surface-Activated Bonding: Implications for Thermal Management

    Jianbo Liang, Yutaka Ohno, Yuichiro Yamashita, Yasuo Shimizu, Shinji Kanda, Naoto Kamiuchi, Seongwoo Kim, Koyama Koji, Yasuyoshi Nagai, Makoto Kasu, and Naoteru Shigekawa

    ACS Applied Nano Materials   3 ( 3 ) 2455 - 2462 2020.02  [Refereed]

  • Fabrication of diamond/Cu direct bonding interface for power device applications

    1. Shinji Kanda, Yasuo Shimizu, Yutaka Ohno, Kenji Shirasaki, Yasuyoshi Nagai, Makoto Kasu, Naoteru Shigekawa, and Jianbo Liang

    Japanese Journal of Applied Physics  59 ( SB ) SBBB03 2019.11  [Refereed]

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Books etc 【 display / non-display

  • Electrical Properties of n+-Si/n-GaN Junctions by Room Temperature Bonding

    Takuya Nishimura, Jianbo Liang, Noriyuki Watanabe, and Naoteru Shigekawa (Part: Joint Work )

    2015 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)  2015

Review Papers (Misc) 【 display / non-display

  • 次世代エレクトロニクスを拓くダイヤモンドと異種材料の直接接合

    重川直輝 梁剣波

    ニューダイヤモンドフォーラム  34 ( 4 ) 3 - 5 2018.10  [Refereed]  [Invited]

Conference Activities & Talks 【 display / non-display

  • Compositional nanoanalysis at grain boundaries in Si by atom probe tomography combined with FIB operated at low temperatures

    Yutaka OHNO, Yasuo SHIMIZU, Naoki EBISAWA, Koji INOUE, Yasuyoshi NAGAI, Hideto YOSHIDA, Naoto KAMIUCHI, Ryotaro ASO, Seiji TAKEDA, Jianbo LIANG, and Naoteru SHIGEKAWA

    Europian Conference and Exhibition on Advanced Material and Processed (EUROMAT2019)  2019.09 

  • Fabrication of GaAs/diamond direct bonding for high power device applications

    Y. NAKAMURA, Yasuo SHIMIZU, Yutaka OHNO, Kenji SHIRASAKI, Yasuyoshi NAGAI, Makoto KASU, Naoteru SHIGEKAWA, and Jianbo LIANG

    13th Topical Workshop on Heterostructure Miccroelectronics (TWHM 2019)  2019.08 

  • Interfacial characterization of GaN/diamond heterostructures prepared by room temperature bonding for high power device applications

    Jianbo LIANG, Yasuo SHIMIZU, Yutaka OHNO, Kenji SHIRASAKI, Yasuyoshi NAGAI, Seongwoo KIM, Martin KUBALL, Makoto KASU, and Naoteru SHIGEKAWA

    13th Topical Workshop on Heterostructure Miccroelectronics (TWHM 2019)  2019.08 

  • Impact of focused ion beam in the structural analysis of semiconductor interfaces fabricated by surface activated bonding

    Yutaka OHNO, Hideto YOSHIDA, Naoto KAMIUCHI, Ryotaro ASO, Seiji TAKEDA, Yasuo SHIMIZU, Naoki EBISAWA, Yasuyoshi NAGAI, Jianbo LIANG, and Naoteru SHIGEKAWA

    30th International Conference on Defects in Semiconductors (ICDS30)  2019.07 

  • Electrical Properties of GaAs/GaN Junctions by Bonding GaN Layers Grown on Free Standing Substrates

    Shoji YAMAJO, Jianbo LIANG, and Naoteru SHIGEKAWA

    13th International Conference on Nitride Semiconductors (ICNS’13)  2019.07 

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Other educational activity and Special note 【 display / non-display

  • Contribution to FD activities

    (2019)

  • Extra-Curricular Activities

    (2018)

  • Class teacher

    (2018)

  • Extra-Curricular Activities

    (2017)

  • Contribution to internationalization

    (2017)

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